Abstract
We study the performance of GaN-based p-i-n ultraviolet (UV) photodetectors
(PDs) with a 60 nm thin p-type contact layer grown on patterned sapphire substrate
(PSS). The PDs on PSS exhibit a low dark current of ~2 pA under a bias of -5 V, a
large UV/visible rejection ratio of ~7×103, and a high-quantum efficiency of ~40% at
365 nm under zero bias. The average quantum efficiency of the PDs still remains
above 20% in the deep-UV region from 280 to 360 nm. In addition, the noise
characteristics of the PDs are also discussed, and the corresponding specific
detectivities limited by the thermal noise and the low-frequency 1/f noise are
calculated.
© 2014 Chinese Optics Letters
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